15 January 2021
AKHAN Semiconductor Inc of Gurnee, IL, USA – which was founded in 2013 and specializes in the fabrication and application of lab-grown, electronics-grade diamond as functional semiconductors – has been issued additional patents for invention by the Taiwan and Korean Intellectual Property Offices. The patents cover additional claims for AKHAN’s next-generation N-type diamond semiconductor electronics materials and devices. Applications for this technology platform span control & guidance electronics in military & space, power inverter for automotive, to FPGA and logic integrated circuits for the global semiconductor industry.
The Taiwanese-issued patent I711153 and South Korea-issued patent 10-2195950 are key additions to AKHAN’s Miraj Diamond intellectual property portfolio. It is the company’s fourth issued patent from Taiwan and third issued patent from South Korea. The technology enables what is claimed to be breakthrough performance in semiconductor electronics. Through the integration of high-quality doped diamond in semiconductor electronics applications, the novel systems allow for next-generation electronics performance, including higher power & frequency capability, higher voltages of operation, higher current density, higher thermal conductivity/reduced thermal budget, amongst other favorable attributes.
“Taiwan and South Korea both represent the global leadership when it comes to semiconductor foundries and production and are home to several of the largest chip foundries, including TSMC, SMIC and Samsung, so it’s important that AKHAN has an established presence in these countries, as well as the proper intellectual property protections in place,” says CEO Adam Khan. “These patents will be critically important in advancing AKHAN’s partnerships and relationships with companies throughout Taiwan, South Korea, and the world.”
AKHAN’s Miraj Diamond Electronics portfolio is at the center of the company’s ability to manufacture next-generation diamond semiconductor technology. The platform enables fabrication of devices such as high-speed/power transistors, RF and microwave electronics. Fabricated devices have been shown to be faster, more efficient and >1000x thinner than the state of the art in both diamond and silicon technologies, says the firm.