by Semiconductor News | Jun 12, 2025 | Semiconductor News
News: Microelectronics 12 June 2025 Mitsubishi Electric unveils compact GaN power amplifier module with record-breaking power efficiency Tokyo-based Mitsubishi Electric Corporation says it has developed a compact 7GHz band gallium nitride (GaN) power amplifier module...
by Semiconductor News | Jun 12, 2025 | Semiconductor News
12 June 2025 Global smartphone production reached 289 million units in Q1 2025, says market research firm TrendForce. Compared to Q1 2024, the figures represent a 3% decline. However, in China, sales in Q1 were boosted by an ongoing consumer subsidy program. ...
by Semiconductor News | Jun 12, 2025 | Semiconductor News
News: Microelectronics 12 June 2025 Imec demonstrates record RF GaN-on-Si transistor performance Imec of Leuven, Belgium has unveiled a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility transistor) on silicon (Si) that achieves both...
by Semiconductor News | Jun 11, 2025 | Semiconductor News
News: Suppliers 11 June 2025 Gallox Semiconductors wins 2025 Hello Tomorrow Global Challenge award Gallox Semiconductors, a startup with roots in Cornell University, has won the 2025 Hello Tomorrow Global Challenge in the Advanced Computing & Electronics category....
by Semiconductor News | Jun 11, 2025 | Semiconductor News
News: Suppliers 11 June 2025 SweGaN appoints new chairman and board members SweGaN AB of Linköping, Sweden, a developer and manufacturer of custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers, based on proprietary growth technology, has announced...
by Semiconductor News | Jun 10, 2025 | Semiconductor News
News: Microelectronics 5 June 2025 EPC9196 launches 3-phase BLDC motor drive inverter for 96–150V battery applications Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect...
