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Clas-SiC qualifies Oxford Instruments’ contactless SiC plasma epi-prep

Clas-SiC qualifies Oxford Instruments’ contactless SiC plasma epi-prep

by Semiconductor News | Sep 8, 2022 | Semiconductor News

News: Suppliers 8 September 2022 Oxford Instruments Plasma Technology (OIPT) of Yatton, near Bristol, UK recently announced the launch of its silicon carbide (SiC) substrate contactless plasma polishing solution to supersede the established chemical mechanical...

OIF members showcasing interoperability for critical networking technologies at ECOC

by Semiconductor News | Sep 8, 2022 | Semiconductor News

News: Optoelectronics 8 September 2022 In booth#701 during the European Conference on OpticalCommunication (ECOC2022) in Basel, Switzerland (19-21September), the Optical Internetworking Forum (OIF) is hosting the largest ever interoperability showcase, with nearly 30...

Altum RF launches 400W S-band power amplifier MMIC

by Semiconductor News | Sep 7, 2022 | Semiconductor News

News: Microelectronics 7 September 2022 In collaboration with Eindhoven-based research institute TNO (the Netherlands Organization for Applied Scientific Research in Delft), Altum RF (which designs high-performance RF to millimeter-wave solutions for commercial and...
Selective-area p-doping by Mg implant then UHP anneal yields kV-class, low-ON-resistance vertical GaN junction barrier Schottky

Selective-area p-doping by Mg implant then UHP anneal yields kV-class, low-ON-resistance vertical GaN junction barrier Schottky

by Semiconductor News | Sep 7, 2022 | Semiconductor News

News: Microelectronics 7 September 2022 By using a unique technique for doping gallium nitride (GaN) in a controlled way, researchers at North Carolina State University (NC State) and spin-off Adroit Materials Inc of Cary, NC, USA plus the Institute of High-Pressure...

Navitas launches first GaNSense half-bridge power ICs

by Semiconductor News | Sep 7, 2022 | Semiconductor News

News: Microelectronics 7 September 2022 Gallium nitride (GaN) power IC firm Navitas Semiconductor of El Segundo, CA, USA and Dublin, Ireland has launched the first GaNSense half-bridge power ICs. These half-bridge ICs enable a new level of MHz switching frequencies...
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