by Semiconductor News | Aug 5, 2025 | Semiconductor News
News: Microelectronics 5 August 2025 Beijing IP Court denies Innoscience’s appeal against EPC’s compensated-gate patent Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect...
by Semiconductor News | Aug 5, 2025 | Semiconductor News
News: Microelectronics 5 August 2025 Wolfspeed appoints Bret Zahn as general manager of Automotive business Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — has appointed Bret Zahn as VP & general...
by Semiconductor News | Aug 4, 2025 | Semiconductor News
News: Microelectronics 4 August 2025 onsemi’s EliteSiC technology powering 800V drive platform in Xiaomi SUVs Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA says that its EliteSiC M3e silicon carbide (SiC) technology is powering an 800V...
by Semiconductor News | Aug 1, 2025 | Semiconductor News
News: Microelectronics 1 August 2025 Innoscience collaborating with NVIDIA on 800VDC power architecture for AI data centers InnoScience (Suzhou) Technology Holding Co Ltd — which manufactures gallium nitride on silicon (GaN) power chips on 8” silicon wafers — says...
by Semiconductor News | Aug 1, 2025 | Semiconductor News
News: LEDs 1 August 2025 Infineon Technologies AG of Munich, Germany says that the Munich District Court (Landgericht München I) has ruled in favor of it in a first instance patent infringement case alleging the unauthorized use of its patented gallium nitride (GaN)...
