by Semiconductor News | Dec 10, 2024 | Semiconductor News
News: Microelectronics 10 December 2024 ROHM and TSMC collaborating on development and volume production of GaN power devices for EVs Japan-based ROHM Co Ltd and Taiwan Semiconductor Manufacturing Co (TSMC) have entered a strategic partnership on development and...
by Semiconductor News | Dec 9, 2024 | Semiconductor News
News: Microelectronics 9 December 2024 Imec integrates InP chiplet on 300mm RF silicon interposer, yielding 0.1dB insertion loss at 140GHz At the 70th annual IEEE International Electron Devices Meeting (IEDM 2024) in San Francisco, CA, USA (7–11 December),...
by Semiconductor News | Dec 6, 2024 | Semiconductor News
News: Microelectronics 6 December 2024 Navitas showcasing GaN and SiC technologies at CES 2025 In the ‘Planet Navitas’ suite (Tech West, Venetian suite 29-335) at the Consumer Electronics Show (CES 2025) in Las Vegas (7–10 January), gallium nitride (GaN) power IC and...
by Semiconductor News | Dec 6, 2024 | Semiconductor News
News: Microelectronics 6 December 2024 VisIC and AVL partner on GaN inverters for EVs VisIC Technologies Ltd of Ness Ziona, Israel – a fabless supplier of power conversion devices based on gallium nitride (GaN) transistors – and mobility technology company AVL of...
by Semiconductor News | Dec 5, 2024 | Semiconductor News
News: Suppliers 5 December 2024 Soitec and GlobalFoundries collaborate on RF-SOI production Engineered substrate manufacturer Soitec of Bernin, near Grenoble, France has committed to deliver 300mm radio frequency silicon-on-insulator (RF-SOI) substrates to New...
