by Semiconductor News | Sep 12, 2025 | Semiconductor News
News: Microelectronics 12 September 2025 NREL’s silicon carbide-based ULIS power module claims record efficiency, power density, and low-cost manufacturability The US National Renewable Energy Laboratory (NREL) has created a silicon carbide (SiC)-based power module...
by Semiconductor News | Sep 11, 2025 | Semiconductor News
News: Microelectronics 11 September 2025 DB HiTek begins customer enablement for 650V GaN HEMT process The 8-inch specialty foundry DB HiTek of Seoul, South Korea says it is in the final stages of development of its 650V E-mode gallium nitride (GaN)...
by Semiconductor News | Sep 11, 2025 | Semiconductor News
News: Suppliers 11 September 2025 Wolfspeed announces commercial launch of 200mm silicon carbide wafers Wolfspeed Inc of Durham, NC, USA — which makes silicon carbide (SiC) materials and power semiconductor devices — has announced the commercial launch of its 200mm...
by Semiconductor News | Sep 10, 2025 | Semiconductor News
News: Optoelectronics 10 September 2025 ams OSRAM launches its first high-power multi-die laser package ams OSRAM GmbH of Premstaetten, Austria and Munich, Germany has introduced the first product in its new Vegalas Power series of high-power laser diodes, targeting...
by Semiconductor News | Sep 10, 2025 | Semiconductor News
News: Microelectronics 10 September 2025 UMass Lowell’s Anhar Bhuiyan wins two US NSF grants worth $797,000 for gallium oxide research The University of Massachusetts Lowell says that Electrical Engineering assistant professor Anhar Bhuiyan (who joined the faculty in...
