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Infineon launches CoolGaN Transistors 650V G5 product family

Infineon launches CoolGaN Transistors 650V G5 product family

by Semiconductor News | Nov 4, 2024 | Semiconductor News

News: Microelectronics 4 November 2024 Infineon launches CoolGaN Transistors 650V G5 product family Infineon Technologies AG of Munich, Germany has strengthened its gallium nitride (GaN) portfolio by launching a new family of high-voltage discretes, the CoolGaN...

Sanan Semiconductor adds 1700V and 2000V devices to silicon carbide portfolio

by Semiconductor News | Oct 31, 2024 | Semiconductor News

News: Microelectronics 31 October 2024 Sanan Semiconductor adds 1700V and 2000V devices to silicon carbide portfolio Wide-bandgap power semiconductor materials, component and foundry services provider Sanan Semiconductor Co Ltd of Changsha City, Hunan, China has...
JST appoints new chief technology officer

JST appoints new chief technology officer

by Semiconductor News | Oct 31, 2024 | Semiconductor News

News: Suppliers 31 October 2024 JST appoints new chief technology officer JST Manufacturing Inc of Meridian, ID, USA (a provider of wet benches, single-wafer surface preparation equipment and chemical processing systems) has appointed Dr Ismail Kashkoush as chief...

III–V Epi’s CTO Richard Hogg chairing International Workshop on PCSELs

by Semiconductor News | Oct 31, 2024 | Semiconductor News

News: Optoelectronics 31 October 2024 III–V Epi’s CTO Richard Hogg chairing International Workshop on PCSELs Professor Richard Hogg, chief technical officer at III–V Epi Ltd of Glasgow, Scotland, UK — which provides a molecular beam epitaxy (MBE) and metal-organic...
DARPA awards University of Michigan’s Zetian Mi $3m to scale III–V materials on silicon

DARPA awards University of Michigan’s Zetian Mi $3m to scale III–V materials on silicon

by Semiconductor News | Oct 31, 2024 | Semiconductor News

News: Microelectronics 31 October 2024 DARPA awards University of Michigan’s Zetian Mi $3m to scale III–V materials on silicon The project ‘CMOS compatible, defect-free universal growth of III–N and III–V multilayer heterostructures on Si (001)’ of Zetian Mi,...
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