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Mitsubishi Electric to ship samples of 200Gbps PIN-PD chip for 800Gbps and 1.6Tbps fiber communication

Mitsubishi Electric to ship samples of 200Gbps PIN-PD chip for 800Gbps and 1.6Tbps fiber communication

by Semiconductor News | Aug 21, 2024 | Semiconductor News

News: Optoelectronics 21 August 2024 Tokyo-based Mitsubishi Electric Corp says that on 1 October it will begin shipping samples of its new 200Gbps PIN-photodiode (PD) chip for use in next-generation optical transceivers to support 800Gbps and 1.6Tbps...

Penn State granted $600,000 to help fund Silicon Carbide Innovation Alliance

by Semiconductor News | Aug 20, 2024 | Semiconductor News

News: Microelectronics 20 August 2024 The Appalachian Regional Commission (ARC) — an economic development partnership agency of the federal government and 13 state governments including Pennsylvania — has awarded $600,000 to Penn State University’s Silicon Carbide...

Guerrilla RF’s Q2 revenue grows 61.7% year-on-year to a record $6.1m

by Semiconductor News | Aug 19, 2024 | Semiconductor News

News: Microelectronics 19 August 2024 For second-quarter 2024, Guerrilla RF Inc (GRF) of Greensboro, NC, USA has reported revenue of $6.1m, up 61.7% on $3.8m a year ago. The firm develops and manufactures radio-frequency integrated circuits (RFICs) and monolithic...
SemiQ adds S7 package option to QSiC 1200V power module family

SemiQ adds S7 package option to QSiC 1200V power module family

by Semiconductor News | Aug 15, 2024 | Semiconductor News

News: Microelectronics 15 August 2024 SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has added an S7 package to its QSiC family of...
Fraunhofer IAF uses MOCVD to fabricate aluminum yttrium nitride

Fraunhofer IAF uses MOCVD to fabricate aluminum yttrium nitride

by Semiconductor News | Aug 14, 2024 | Semiconductor News

News: Microelectronics 14 August 2024 Fraunhofer Institute for Applied Solid State Physics (IAF) of Freiburg, Germany has used metal-organic chemical vapor deposition (MOCVD) to fabricate and characterize aluminum yttrium nitride (AlYN), enabling the development of...
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