by Semiconductor News | Sep 1, 2023 | Semiconductor News
News: Microelectronics 1 September 2023 Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion —says that it is...
by Semiconductor News | Aug 31, 2023 | Semiconductor News
News: Microelectronics 31 August 2023 Japan-based power semiconductor maker ROHM Co Ltd has developed the BM3G0xxMUV-LB series of EcoGaN power-stage ICs with built-in 650V gallium nitride (GaN) high-electron-mobility transistors (HEMTs) and gate driver, optimized for...
by Semiconductor News | Aug 31, 2023 | Semiconductor News
News: Microelectronics 31 August 2023 Toshiba is now shipping the TWxxxZxxxC series of ten silicon carbide (SiC) MOSFETs based on the firm’s third-generation technology, targeted at reducing losses in a variety of industrial applications including switching power...
by Semiconductor News | Aug 30, 2023 | Semiconductor News
News: Optoelectronics 30 August 2023 In booth #11C63at the 24th China International Optoelectronics Expo (CIOE 2023) in Shenzhen (6–8 September), POET Technologies Inc of Toronto, Ontario, Canada — designer and developer of the POET Optical Interposer, photonic...
by Semiconductor News | Aug 30, 2023 | Semiconductor News
News: Microelectronics 30 August 2023 SweGaN AB of Linköping, Sweden, which develops and manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for telecom, satellite communications, defense and power...
by Semiconductor News | Aug 29, 2023 | Semiconductor News
News: Microelectronics 29 August 2023 Japan-based Toshiba Electronic Devices & Storage Corp (TDSC) – which was spun off from Toshiba Corp in 2017 – has begun volume shipments of what it reckons is the industry’s first 2200V dual silicon carbide (SiC) MOSFET module...
