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Fraunhofer IAF inaugurates new MOCVD and laboratory research buildings

Fraunhofer IAF inaugurates new MOCVD and laboratory research buildings

by Semiconductor News | Jul 1, 2022 | Semiconductor News

News: Microelectronics 1 July 2022 On 30 June, Fraunhofer Institute for Applied Solid State Physics IAF in Freiburg, Germany officially inaugurated two new buildings with a ceremonial ribbon-cutting by executive director professor Rüdiger Quay, Freiburg’s mayor for...
Palomar places vacuum reflow furnace at UK’s EPIC

Palomar places vacuum reflow furnace at UK’s EPIC

by Semiconductor News | Jul 1, 2022 | Semiconductor News

News: Suppliers 1 July 2022 Photonics and microelectronic device assembly & packaging equipment maker Palomar Technologies Inc of Carlsbad, CA, USA has announced the consignment of an SST 5100 vacuum reflow furnace at the Electronics and Photonics Innovation...

US Patent Office denies ST’s petition to invalidate Purdue SiC patent

by Semiconductor News | Jun 30, 2022 | Semiconductor News

News: Microelectronics 30 June 2022 Purdue University in West Lafayette, IN, USA says that the Patent Trial and Appeal Board at the US Patent and Trademark Office has denied STMicroelectronics’ challenge to the patentability of its US patent 7,498,633 involving...
EPC adds fifth eGaN FET to rad-hard family, offering 7mΩ, 100V, 160A

EPC adds fifth eGaN FET to rad-hard family, offering 7mΩ, 100V, 160A

by Semiconductor News | Jun 30, 2022 | Semiconductor News

News: Microelectronics 30 June 2022 Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has launched the EPC7004, a 100V, 7mΩ, 160APulsed, radiation-hardened enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistor (FET) in a small...

Navitas powering Xiaomi’s first in-box GaN 100W laptop fast charger

by Semiconductor News | Jun 29, 2022 | Semiconductor News

News: Microelectronics 29 June 2022 Gallium nitride (GaN) power integrated circuit firm Navitas Semiconductor of El Segundo, CA, USA and Dublin, Ireland says that its GaNFast power ICs with GaNSense technology are driving the 100W fast chargers supplied ‘in-box’ in...

Umicore develops ultra-low-resistivity 8” n-type germanium wafers

by Semiconductor News | Jun 28, 2022 | Semiconductor News

News: Suppliers 28 June 2022 Germanium product and materials solutions supplier Umicore Electro-Optic Materials (EOM) has announced the development of ultra-low (<1mΩ.cm) 6” and 8” germanium wafers for vertical-cavity surface-emitting lasers (VCSELs). As a key...
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