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Navitas’ GaNFast power ICs powering Anker’s 100W fast charger

by Semiconductor News | Jun 17, 2022 | Semiconductor News

News: Microelectronics 17 June 2022 Gallium nitride (GaN) power IC firm Navitas Semiconductor Corp of El Segundo, CA, USA and Dublin, Ireland says that its GaNFast power ICs with GaNSense technology are powering the new 100W fast charger of consumer electronics firm...
Qorvo awarded Department of Defense advanced RF GaN program

Qorvo awarded Department of Defense advanced RF GaN program

by Semiconductor News | Jun 16, 2022 | Semiconductor News

News: Microelectronics 16 June 2022 Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has been selected by the US Department of Defense (DoD) to proceed with the program ‘Advanced...
Perovskite–GaN tandem LED with improved tunable luminance and color

Perovskite–GaN tandem LED with improved tunable luminance and color

by Semiconductor News | Jun 15, 2022 | Semiconductor News

News: LEDs 15 June 2022 In conventional display panels, the red, green and blue sub-pixels are assembled in a side-by-side structure, which intrinsically leads to a large pixel area, making it difficult to fulfill the requirements of applications requiring ultra-high...

EPC launches 3.9mΩ 100V rad-hard GaN transistor for space applications

by Semiconductor News | Jun 14, 2022 | Semiconductor News

News: Microelectronics 14 June 2022 Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has launched the EPC7018, a 100V, 3.9mΩ, 345APulsed, radiation-hardened enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistor (FET) in a small...

AquiSense launches European subsidiary

by Semiconductor News | Jun 13, 2022 | Semiconductor News

News: LEDs 13 June 2022 AquiSense Technologies LLC of Erlanger, KY, USA (which designs and manufactures water, air and surface disinfection systems based on UV-C LEDs) has unveiled its latest subsidiary AquiSense Technologies Europe GmbH, providing support to local...
RF GaN device market growth slowed to 10% in 2021 as Huawei ends buffering of trade sanctions

RF GaN device market growth slowed to 10% in 2021 as Huawei ends buffering of trade sanctions

by Semiconductor News | Jun 10, 2022 | Semiconductor News

News: Markets 10 June 2022 Revenue growth from RF GaN-enabled devices slowed down in 2021, but still managed to increase by 10%, according to the Strategy Analytics Advanced Semiconductor Applications (ASA) and Advanced Defense Systems (ADS) report ‘RF GaN Device...
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