News: Microelectronics
7 October 2025
Imec launches 300mm GaN program to develop low- and high-voltage power devices and reduce manufacturing costs
Nanoelectronics research center imec of Leuven, Belgium has welcomed AIXTRON, GlobalFoundries, KLA Corp, Synopsys and Veeco as first partners in its 300mm gallium nitride (GaN) open innovation program track for low- and high-voltage power electronics applications.
As part of imec’s industrial affiliation program (IIAP) on GaN power electronics, this program track has been set up to develop 300mm GaN epi growth, and low- and high-voltage GaN high-electron-mobility transistor (HEMT) process flows. The use of 300mm substrates should not only reduce GaN device manufacturing costs but it will also allow the development of more advanced power electronics devices, such as efficient low-voltage point-of-load converters for CPUs and GPUs.
The recent market introduction of GaN-based fast battery chargers underscores the potential of GaN technology for power electronics applications, says imec. Backed by continuing progress made in GaN epi growth, GaN device and IC manufacturing, reliability and robustness, and system-level optimization, GaN technology is poised to enable a new generation of power electronics products, it adds. These will enter the market with reduced form factors, smaller weight, and superior energy conversion efficiency compared with silicon-based solutions. Examples are on-board chargers and DC/DC converters for automotive applications, inverters for solar panels, and power distribution systems for telecom and AI data centers, where GaN-based building blocks contribute to the overall decarbonization, electrification and digitalization of society.
A notable trend in GaN technology development is the move to larger wafer diameters, with capacity now mostly available on 200mm. With the launch of its 300mm GaN program track, imec is taking the next step, building on its 200mm expertise. “The benefits of transitioning to 300mm wafers go beyond upscaling production and reducing manufacturing costs,” says Stefaan Decoutere, fellow and program director of the GaN power electronics program at imec. “Our CMOS-compatible GaN technology now has access to 300mm state-of-the-art equipment that will allow us to develop more advanced GaN-based power devices. Examples are aggressively scaled low-voltage p-GaN gate HEMTs for use in point-of-load converters, supporting energy-efficient power distribution for CPUs and GPUs.”
Picture: 300mm GaN-on-Si wafer from AIXTRON inspected on 8 Series/CIRCL tool from KLA, after p-GaN etch by imec.
As part of the 300mm GaN program, a baseline lateral p-GaN HEMT technology platform will first be established for low-voltage applications (100V and beyond), using 300mm Si(111) as a substrate. For this, process module work centered around p-GaN etch and Ohmic contact formation is ongoing. Later, high-voltage applications are targeted. For 650V and above, developments will utilize 300mm semi-spec and CMOS-compatible QST engineered substrates (a material with poly-crystalline AlN core). During the developments, control over the bow of the 300mm wafers and their mechanical strength are prime concerns.
The launch of the 300mm GaN program follows successful 300mm wafer handling tests and mask-set development. Imec expects to have full 300mm capabilities installed in its 300mm cleanroom by the end of 2025. “The success of the 300mm GaN development also hinges on the ability to establish a robust ecosystem and jointly drive innovation from 300mm GaN growth and process integration to packaging solutions,” says Decoutere. “We are therefore pleased to announce AIXTRON, GlobalFoundries, KLA Corp, Synopsys and Veeco as first partners in our open R&D program track on 300mm GaN and hope to welcome more partners soon, because developing advanced GaN power electronics requires close coupling between design, epitaxy, process integration and applications – a coupling that has proved to be critical for our pioneering work on 200mm GaN.”
Imec demonstrates record RF GaN-on-Si transistor performance