by Semiconductor News | Jan 6, 2023 | Semiconductor News
News: LEDs 6 January 2023 MICLEDI Microdisplays B.V. of Leuven, Belgium – a fabless developer of micro-LED display modules for augmented reality (AR) glasses that was spun off from nanoelectronics research center IMEC in 2019 – has produced its first demonstration...
by Semiconductor News | Jan 5, 2023 | Semiconductor News
News: Microelectronics 5 January 2023 Guerrilla RF Inc (GRF) of Greensboro, NC, USA – a provider of radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications – has announced the initial closing of its...
by Semiconductor News | Jan 4, 2023 | Semiconductor News
News: LEDs 4 January 2023 Three years ago Nichia Corp of Anan City, Tokushima, Japan and Infineon Technologies AG of Munich, Germany announced the joint development of a high-definition (HD) light engine with more than 16,000 micro-LEDs for headlight applications....
by Semiconductor News | Jan 3, 2023 | Semiconductor News
News: Microelectronics 3 January 2023 In its annual power semiconductor predictions, GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications) reckons that...
by Semiconductor News | Jan 2, 2023 | Semiconductor News
News: Microelectronics 2 January 2023 Power transistors to regulate the flow of electrical power have traditionally been made with silicon, while more advanced transistors are made of silicon carbide (SiC) or gallium nitride (GaN). But Trevor Thornton, a professor of...
by Semiconductor News | Dec 29, 2022 | Semiconductor News
News: Optoelectronics 29 December 2022 At a special meeting, shareholders of special-purpose acquisition company (SPAC) Tailwind Acquisition Corp voted to approve its business combination (announced on 8 August) with NUBURU Inc of Centennial, CO, USA, as well as other...
by Semiconductor News | Dec 23, 2022 | Semiconductor News
News: Microelectronics 23 December 2022 Jaguar TCS Racing has revealed the Jaguar I-TYPE 6, designed and engineered to compete for the 2023 ABB FIA Formula E World Championship, as the all-electric motorsport category moves into a new Gen3 era on 14 January in Mexico...
by Semiconductor News | Dec 23, 2022 | Semiconductor News
News: Optoelectronics 23 December 2022 POET Technologies Inc of Toronto, Ontario, Canada — a designer and developer of the POET Optical Interposer and photonic integrated circuits (PICs) for the data-center, telecom and artificial intelligence (AI) markets — intends...
by Semiconductor News | Dec 22, 2022 | Semiconductor News
News: Microelectronics 22 December 2022 Tokyo-based Mitsubishi Electric Corp is adding two new 12.75-13.25GHz (low-Ku-band) 70W (48.3dBm) gallium nitride high-electron-mobility transistors (GaN HEMTs) to its lineup of GaN HEMTs for satellite communication (SATCOM)...
by Semiconductor News | Dec 22, 2022 | Semiconductor News
News: Photovoltaics 22 December 2022 Compared with a pure silicon solar cell, stacking a solar cell made of perovskite material on top of a conventional silicon solar cell enables more effective use of the solar spectrum. Scientists around the world are presently...
